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IRFP22N60K 8/26/04 smps mosfet hexfet power mosfet hard switching primary or pfs switch switch mode power supply (smps) uninterruptible power supply high speed power switching motor drive benefits applications low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current enhanced body diode dv/dt capability parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 22 i d @ t c = 100c continuous drain current, v gs @ 10v 14 a i dm pulsed drain current 88 p d @t c = 25c power dissipation 370 w linear derating factor 2.9 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 18 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings avalanche characteristics symbol parameter typ. max. units e as single pulse avalanche energy ??? 380 mj i ar avalanche current ??? 22 a e ar repetitive avalanche energy ??? 37 mj symbol parameter typ. max. units r jc junction-to-case ??? 0.34 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance v dss r ds(on) typ. i d 600v 240m ? 22a to-247ac www.vishay.com 1 document number: 90272
symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.30 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 240 280 m ? v gs = 10v, i d = 13a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds = 600v, v gs = 0v ??? ??? 250 a v ds = 480v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 v gs = -30v symbol parameter min. typ. max. units conditions g fs forward transconductance 11 ??? ??? s v ds = 50v, i d = 13a q g total gate charge ??? ??? 150 i d = 22a q gs gate-to-source charge ??? ??? 45 nc v ds = 480v q gd gate-to-drain ("miller") charge ??? ??? 76 v gs = 10v t d(on) turn-on delay time ??? 26 ??? v dd = 300v t r rise time ??? 99 ??? i d = 22a t d(off) turn-off delay time ??? 48 ??? r g = 6.2 ? t f fall time ??? 37 ??? v gs = 10v c iss input capacitance ??? 3570 ??? v gs = 0v c oss output capacitance ??? 350 ??? v ds = 25v c rss reverse transfer capacitance ??? 36 ??? pf ? = 1.0mhz c oss output capacitance ??? 4710 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 92 ??? v gs = 0v, v ds = 480v, ? = 1.0mhz c oss eff. effective output capacitance ??? 180 ??? v gs = 0v, v ds = 0v to 480v dynamic @ t j = 25c (unless otherwise specified) ns static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. i sd 22a, di/dt 540 a/s, v dd v (br)dss , t j 150c. starting t j = 25c, l = 1.5mh, r g = 25 ? , i as = 22a pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . s d g diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 22 mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 88 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 22a, v gs = 0v ??? 590 890 t j = 25c i f = 22a ??? 670 1010 t j = 125c di/dt = 100a/s ??? 7.2 11 t j = 25c ??? 8.5 13 t j = 125c i rrm reverse recovery current ??? 26 39 a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) t rr reverse recovery time q rr reverse recovery charge ns c
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 22a 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 150c vgs top 1 5v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5. 0 6. 0 7. 0 8. 0 9.0 10. 0 v gs , gate-to-source voltage (v) 0.01 0.10 1.00 10. 00 100. 00 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v www.vishay.com 3 document number: 90272
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ci s s v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 480v vds= 300v vds= 120v i d = 22a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 10000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec www.vishay.com 4 document number: 90272
fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d www.vishay.com 5 document number: 90272
25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 9.8a 14a 22a q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13a. gate charge test circuit fig 13b. basic gate charge waveform fig 12a. maximum avalanche energy vs. drain current fig 12d. unclamped inductive waveforms fig 12c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v www.vishay.com 6 document number: 90272
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 08/04

example: as s emb led on ww 35, 2000 lot code 5657 wit h as s e mb l y t his is an irfpe30 in the assembly line "h" 035h logo int ernat ional rectifier irfpe30 lot code as s e mb l y 56 57 part number dat e code ye ar 0 = 200 0 week 35 line h note: "p" in assembly line position indicates "lead-free" www.vishay.com 8 document number: 90272
legal disclaimer notice vishay document number: 99901 www.vishay.com revision: 12-mar-07 1 notice the products described herein were acquired by vishay intertechnology, inc., as part of its acquisition of international rectifier?s power control systems (pcs) business, which closed in april 2007. specifications of the products displayed herein are pending review by vishay and are subject to the terms and conditions shown below. specifications of the products displayed herein are subject to change without notice. vishay intertechnology, inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale. international rectifier ? , ir ? , the ir logo, hexfet ? , hexsense ? , hexdip ? , dol ? , intero ? , and powirtrain ? are registered trademarks of international rectifier corporation in the u.s. and other countries. all other product names noted herein may be trademarks of their respective owners.

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